2SB1418AQA View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SB1418AQA Datasheet PDF : 3 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type darlington
For power amplification
Unit: mm
Complementary to 2SD2138 and 2SD2138A
10.0±0.2
5.0±0.1
1.0±0.2
■ Features
• High forward current transfer ratio hFE
/ • High-speed switching
• Allowing automatic insertion with radial taping
e . ■ Absolute Maximum Ratings TC = 25°C
c ge Parameter
Symbol Rating
Unit
n d sta Collector-base voltage 2SB1418 VCBO
−60
V
cle (Emitter open)
2SB1418A
−80
a e lifecy Collector-emitter voltage 2SB1418 VCEO
−60
V
t (Base open)
2SB1418A
−80
n u uc Emitter-base voltage (Collector open) VEBO
−5
V
rod Collector current
IC
−2
A
te tin r P Peakcollectorcurrent
ICP
−4
A
g fou e . Collector power dissipation
PC
15
W
win typ tion Ta = 25°C
2.0
in n follo nce e d a Junction temperature
Tj
150
°C
es tena typ type form / Storage temperature
Tstg −55 to +150 °C
a coed incluedd maintenancetinued type test in .jp/en ■ Electrical Characteristics TC = 25°C ± 3°C
u n in on d t la .co Parameter
Symbol
Conditions
M is tin la a isc ue ou nic Collector-emitter voltage
on p m d d ntin ab aso (Base open)
2SB1418 VCEO
2SB1418A
IC = −30 mA, IB = 0
isc ne co RL an Base-emitter voltage
/D pla dis g U n.p Collector-base cutoff
e in ico current (Emitter open)
VBE
2SB1418 ICBO
2SB1418A
Dtenanc follow .sem Collector-emitter cutoff
in it w current (Base open)
2SB1418 ICEO
2SB1418A
Ma e vis ://ww Emitter-base cutoff current (Collector open)
Pleas http Forward current transfer ratio
IEBO
hFE1
hFE2 *
VCE = −4 V, IC = −2 A
VCB = −60 V, IE = 0
VCB = −80 V, IE = 0
VCE = −30 V, IB = 0
VCE = −40 V, IB = 0
VEB = −5 V, IC = 0
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −2 A
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Internal Connection
C
B
E
Min Typ Max Unit
−60
V
−80
−2.8
V
−100 µA
−100
−100 µA
−100
−100 µA
1 000
1 000
10 000
Collector-emitter saturation voltage
VCE(sat) IC = −2 A, IB = −8 mA
−2.5
V
Transition frequency
fT
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = −2 A, IB1 = − 8 mA, IB2 = 8 mA
0.2
µs
Turn-off time
toff
VCC = −50 V
2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: March 2003
SJD00073BED
1
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