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Part Name
Description
C5949 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
C5949
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
C5949 Datasheet PDF : 4 Pages
1
2
3
4
20
Common emitter
Tc
=
25°C
I
C
– V
CE
16
500
400
300
12
200
8
100
4
50
I
B
=
20 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage V
CE
(V)
2SC5949
16
Common emitter
VCE
=
5 V
I
C
– V
BE
12
8
Tc
=
100°C
25
−
25
4
0
0
0.5
1.0
1.5
2.0
2.5
Base-emitter voltage V
BE
(V)
1000
500
Common emitter
VCE
=
5 V
300
Tc
=
100°C
100
25
50
30
−
25
hFE – I
C
10
5
0.03
0.1
0.3
1
3
10
30
Collector current I
C
(A)
V
CE (sat)
– I
C
2
Common emitter
1
IC / IB
=
10 V
0.5
0.3
Tc
=
100°C
0.1
0.05
0.03
25
−
25
0.01
0.03
0.1
0.3
1
3
10
30
Collector current I
C
(A)
f
T
– I
C
100
10
1
0.01
Common emitter
Tc
=
25°C
VCE
=
5 V
0.1
1
10
Collector current I
C
(A)
Safe operating area
100
IC max (pulsed)
*
10
IC max (continuous)
DC operation
Tc
=
25°C
1 ms
*
10 ms
*
100 ms
*
1
*:Single non-repetitive pulse
Tc = 25°C
Curves must be de-rated
linearly with increase in
temperature.
0.1
0.1
1
10
VCEO max
100
1000
Collector-emitter voltage V
CE
(V)
3
2006-11-16
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