042N03MS View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
042N03MS Datasheet PDF : 10 Pages
| |||
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
8
BSC042N03MS G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
2.5
2
6
98 %
1.5
4
typ
1
2
0.5
0
-60 -20
20
60 100 140 180
Tj [°C]
0
-60 -20 20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
25 °C
150 °C, 98%
Ciss
103
1000
Coss
100
150 °C
25 °C, 98%
102
100
10
Crss
101
10
0
Rev. 2.1
10
20
VDS [V]
1
30
0.0
page 6
0.5
1.0
1.5
2.0
VSD [V]
2013-05-17
Share Link: 