2SA10960A View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SA10960A Datasheet PDF : 4 Pages
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Power Transistors
2SA1096, 2SA1096A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC2497, 2SC2497A
8.0+–00..15
Unit: mm
3.2±0.2
φ 3.16±0.1
■ Features
• Output of 5 W can be obtained by a complementary pair with
2SC2497 and 2SC2497A
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
−70
V
n d ge. ed Collector-emitter voltage 2SA1096 VCEO
−50
V
sta tinu (Base open)
2SA1096A
−60
a e cycle iscon Emitter-base voltage (Collector open) VEBO
−5
V
life d, d Collector current
IC
−2
A
n u duct type Peak collector current
ICP
−3
A
te tin Pro ed Collector power dissipation
four ntinu Junction temperature
ing isco Storage temperature
PC
1.2
W
Tj
150
°C
Tstg −55 to +150 °C
ain onludes foell,opwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
c tinued ance Collector-base voltage (Emitter open)
M is con inten Collector-emitter voltage 2SA1096
/Dis ma (Base open)
2SA1096A
VCBO
VCEO
IC = −1 mA, IE = 0
IC = −2 mA, IB = 0
D ance type, Collector-base cutoff current (Emitter open)
ten ce Collector-emitter cutoff current (Base open)
Main tenan Emitter-base cutoff current (Collector open)
ain Forward current transfer ratio *1,2
d m Collector-emitter saturation voltage
(plane Base-emitter saturation voltage
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
IC = −1.5 A, IB = − 0.15 A
IC = −1.5 A, IB = − 0.15 A
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
Min Typ Max Unit
−70
V
−50
V
−60
−1
µA
−100 µA
−10 µA
80
220
−1
V
−1.5
V
Transition frequency
fT
VCB = −5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob VCB = −20 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
55
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
80 to 160 120 to 220
Publication date: February 2003
SJD00007BED
1
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