NVD5490NLT4G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NVD5490NLT4G Datasheet PDF : 6 Pages
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NVD5490NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
IGSS
VGS = 0 V, ID = 250 mA
60
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
V
1.0
mA
10
"100
nA
Gate Threshold Voltage
Drain−to−Source On Resistance
VGS(TH)
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 9 A
VDS = 15 V, ID = 20 A
1.5
2.5
V
46
64
mW
66
85
15
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
365
pF
91
46
Total Gate Charge
QG(TOT)
VDS = 48 V,
VGS = 4.5 V
7.8
nC
ID = 9 A
VGS = 10 V
14
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
QG(TH)
QGS
QGD
VDS = 48 V, ID = 9 A
VGS = 10 V
0.4
nC
1.5
nC
5.4
nC
Gate Resistance
RG
7
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDS = 48 V, VGS = 4.5 V,
ID = 9 A, RG = 10 W
VDS = 48 V, VGS = 10 V,
ID = 9 A, RG = 10 W
9.4
ns
57
24
35
6.7
ns
17
34
34
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 9 A
TJ = 125°C
0.97
1.2
V
0.87
Reverse Recovery Time
trr
25
ns
Charge Time
Discharge Time
ta
IS = 20.5 Adc, VGS = 0 Vdc,
20
tb
dIS/dt = 100 A/ms
5.0
Reverse Recovery Stored Charge
QRR
27
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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