STD65N55F3 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD65N55F3
STMicroelectronics
STD65N55F3 Datasheet PDF : 17 Pages
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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery
EAS(3)
Single pulse avalanche energy
Tj
Operating junction temperature range
Tstg
Storage temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 65A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ Tjmax
3. Starting Tj = 25°C, ID = 32 A, VDD = 25 V
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
1. When mounted on an 1- inch² FR-4 board, 2oz Cu.
STD65N55F3
Electrical ratings
Value
55
±20
80
56
320
110
11
390
-55 to 175
Unit
V
V
A
A
A
W
V/ns
mJ
°C
Value
1.36
50
Unit
°C/W
°C/W
DS5128 - Rev 5
page 2/17
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