C2M0160120D View Datasheet(PDF) - Cree, Inc
Part Name
Description
Manufacturer
C2M0160120D Datasheet PDF : 9 Pages
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Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Unit
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
RDS(on)
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs
Transconductance
1200
2.0
2.5
1.5
1.9
1
10
160
290
4.3
4.1
100
250
0.25
196
400
V VGS = 0 V, IDS = 50 μA
V VDS = 10V, IDS = 0.5 mA
V
VDS = 10V, IDS = 0.5 mA,
TJ = 150ºC
VDS = 1200 V, VGS = 0 V
μA VDS = 1200 V, VGS = 0 V
TJ = 150ºC
μA VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 10 A
mΩ
VGS = 20 V, ID = 10A, TJ = 150ºC
VDS= 20 V, IDS= 10 A
S
VDS= 20 V, IDS= 10 A, TJ = 150ºC
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Eoss
Coss Stored Energy
527
47
4
15
VGS = 0 V
pF VDS = 800 V
f = 1 MHz
μJ VAC = 25 mV
td(on)v
tfv
td(off)v
trv
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
Rise Time
7
VDD = 800 V, VGS = -5/20 V
7
ID = 10 A
13
ns
RG(ext) = 0 Ω, RL = 40 Ω
12
Timing relative to VDS
RG
Internal Gate Resistance
6.5
Ω f = 1 MHz, VAC = 25 mV
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig.
16, 17
Fig. 18
Fig. 27
Built-in SiC Body Diode Characteristics
Symbol Parameter
VSD
Diode Forward Voltage
Typ.
3.1
2.9
Thermal Characteristics
Max.
Unit
V
Test Conditions
VGS = -5 V, IF=5 A, TJ = 25 ºC
VGS = -2 V, IF=5 A, TJ = 150 ºC
Symbol Parameter
RθJC
Thermal Resistance from Junction to Case
RθCS
Case to Sink, w/ Thermal Compound
RθJA
Thermal Resistance From Junction to Ambient
Typ.
0.9
0.25
Gate Charge Characteristics
Symbol Parameter
Qgs
Gate to Source Charge
Qgd
Gate to Drain Charge
Qg
Gate Charge Total
Typ.
6.9
13.6
32.6
Max.
1.0
40
Unit
K/W
Test Conditions
Max.
Unit
Test Conditions
VDS = 800 V, VGS = -5/20 V
nC ID =10 A
Per JEDEC24 pg 27
Note
Fig 9, 10
Note
Fig. 21
Note
Fig. 12
2
C2M0160120D Rev. -
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