STGWA15M120DF3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STGWA15M120DF3

Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

STMicroelectronics 

STGW15M120DF3

STGWA15M120DF3

Trench gate field-stop IGBT, M series

1200 V, 15 A low loss

Datasheet - production data







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Figure 1.Internal schematic diagram

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Features

• 10 µs of short-circuit withstand time

• VCE(sat) = 1.85 V (typ.) @ IC = 15 A

• Tight parameters distribution

• Safer paralleling

• Low thermal resistance

• Soft and fast recovery antiparallel diode

Applications

• Industrial drives

• UPS

• Solar

• Welding

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series of

IGBTs, which represent an optimum compromise

in performance to maximize the efficiency of

inverter systems where low-loss and short circuit

capability are essential. Furthermore, a positive

VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

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Order code

STGW15M120DF3

STGWA15M120DF3

Table 1. Device summary

Marking

Package

G15M120DF3

TO-247

G15M120DF3

TO-247 long leads

Packaging

Tube

Tube

October 2014

This is information on a product in full production.

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