MTP10N10EL View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

Manufacturer

MTP10N10EL

TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

Motorola => Freescale 

MTP10N10EL

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

100

—

—

115

Vdc

—

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 100 Vdc, VGS = 0 Vdc)°

(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)

IDSS

IGSS

µAdc

—

—

10

—

—

100

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)µ

VGS(th)

Vdc

1.0

1.45

2.0

—

4.0

—

mV/°C

Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 5.0 Adc)

Drain–to–Source On–Voltage

(VGS = 5.0 Vdc, ID = 10 Adc)°

(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 8.0 Vdc, ID = 5.0 Adc)

RDS(on)

VDS(on)

gFS

—

0.17

0.22

Ohm

Vdc

—

1.85

2.6

—

—

2.3

5.0

7.9

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

—

741

1040

pF

—

175

250

—

18.9

40

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDD = 50 Vdc, ID = 10 Adc,

VGS = 5.0 Vdc, Rg = 9.1 Ω)

(VDS = 80 Vdc, ID = 10 Adc,

VGS = 5.0 Vdc)

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

—

11

20

ns

—

74

150

—

17

30

—

38

80

—

9.3

15

nC

—

2.56

—

4.4

—

—

4.6

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 10 Adc, VGS = 0 Vdc)

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

Vdc

—

0.98

1.6

—

0.898

—

Reverse Recovery Time

Reverse Recovery Stored Charge

(IS = 10 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

ta

tb

QRR

—

124.7

—

ns

—

86

—

—

38.7

—

—

0.539

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

Ld

nH

—

4.5

—

Internal Source Inductance

Ls

(Measured from the source lead 0.25″ from package to source bond pad.)

—

7.5

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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