2SD2423 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SD2423

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD2423

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

VCBO

50

V

VCEO

50

V

VEBO

7

V

IC

1.5

A

PC * 1

1

W

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Collector to emitter diode forward current

ID

1.5

A

Note: 1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 50

—

voltage

Collector to emitter breakdown V(BR)CEO 50

—

voltage

Collector to emitter sustaining VCEO(sus) 50

—

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CEO

hFE

VCE(sat)1

—

—

2000 —

—

—

Collector to emitter saturation VCE(sat)2 —

—

voltage

Base to emitter saturation

VBE(sat)1

—

—

voltage

Base to emitter saturation

VBE(sat)2

—

—

voltage

Emitter to collector diode

VD

forward voltage

—

—

Notes: 1. Pulse test

2. Marking is “GT”.

Max Unit

70

V

—

V

70

V

—

V

10

µA

10000

1.5 V

2.3 V

2.0 V

2.5 V

3.5 V

Test conditions

IC = 100 µA, IE = 0

IC = 10 mA, RBE = ∞

IC = 1.5 A, RBE = ∞,

L = 10 mH*1

IE = 50 mA, IC = 0

VCE = 40 V, RBE = ∞

VCE = 3 V, IC = 1 A*1

IC = 1 A, IB = 1 mA*1

IC = 1.5 A, IB = 1.5 mA*1

IC = 1 A, IB = 1 mA*1

IC = 1.5 A, IB = 1.5 mA*1

ID = 1.5 A*1

2

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