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Part Name
Description
200N25N(2010) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
200N25N
(Rev.:2010)
OptiMOS™3 Power-Transistor
Infineon Technologies
200N25N Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
1 Power dissipation
P
tot
=f(
T
C
)
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
2 Drain current
I
D
=f(
T
C
);
V
GS
:
320
70
280
60
240
50
200
40
160
30
120
20
80
40
10
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
3
10
0
1 µs
10 µs
10
2
100 µs
0.5
10
1
10
0
10
-1
10
-1
1 ms
10 ms
DC
10
0
10
1
10
2
V
DS
[V]
0.2
10
-1
0.1
0.05
0.02
0.01
single pulse
10
-2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
Rev. 2.3
page 4
2010-10-19
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