2SK3219-01MR View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK3219-01MR Datasheet PDF : 4 Pages
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2SK3218-01
Characteristics
Power Dissipation
PD=f(Tc)
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Tc [°C]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
100
15V
VGS=20V
10V
80
7.0V
6.5V
60
6.0V
5.5V
40
5.0V
20
4.5V
0
0
1
2
3
4
5
VDS [V]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
102
101
100
10-110-1
100
101
102
ID [A]
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):Single Pulse(D=0),Tc=25°C
103
102
D.C.
101
t=
1µs
10µs
100µs
1ms
100
t
t
D=
T
T
10ms
100ms
10-1
10-1
100
101
102
103
VDS [V]
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0
2
4
6
8
10
VGS [V]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
0.12
0.10
VGS=
4.5V 5.0V
5.5V
6.0V
0.08
0.06
0.04
6.5V
7.0V
10V
15V
20V
0.02
0.00
0
20
40
60
80
100
120
ID [A]
2
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