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Part Name
Description
K18A50D View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
K18A50D
Silicon N Channel MOS Type / FET
Toshiba
K18A50D Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
1
COMMON SOURCE
VGS
=
10 V
PULSE TEST
0.8
0.6
18
9
0.4
ID
=
4.5 A
0.2
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK18A50D
I
DR
– V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
10
1
5
3
0.1
0
1
VGS
=
0 V
−
0.3
−
0.6
−
0.9
−
1.2
−
1.5
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
100
CAPACITANCE – V
DS
Ciss
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
80
60
40
20
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
300
200
16
VDD
=
100 V
400
12
200
8
VGS
COMMON SOURCE
ID
=
18 A
Tc
=
25°C
100
PULSE TEST
4
0
0
0
20
40
60
80
TOTAL GATE CHARGE Q
g
(nC)
4
2010-08-12
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