Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
K18A50D View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
K18A50D
Silicon N Channel MOS Type / FET
Toshiba
K18A50D Datasheet PDF : 6 Pages
1
2
3
4
5
6
TK18A50D
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
0.001
10
μ
100
μ
r
th
– t
w
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
2.5 °C/W
1m
10m
100m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (pulsed)
*
100
μ
s
*
10 ID max (continuous)
1 ms
*
1
DC operation
Tc
=
25°C
0.1
*: SINGLE NONREPETITIVE
0.01
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001
0.1
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
600
500
400
300
200
100
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVEFORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
2.8 mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2010-08-12
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]