2SK3235 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SK3235

Silicon N Channel MOS FET / High Speed Power Switching

Renesas Electronics 

2SK3235

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain

current

VDSS

VGSS

ID

I Note1

D (pulse)

I DR

Body-drain diode reverse drain peak

current

I Note1

DR (pulse)

Avalanche current

Channel dissipation

I Note3

AP

Pch Note2

Channel to case Thermal Impedance θ ch-c

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Tch ≤ 150°C

Value

500

±30

15

60

15

60

15

150

0.833

150

–55 to +150

Unit

V

V

A

A

A

A

A

W

°C/W

°C

°C

2

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