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Part Name
Description
2SK3235 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SK3235
Silicon N Channel MOS FET / High Speed Power Switching
Renesas Electronics
2SK3235 Datasheet PDF : 12 Pages
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Reverse Drain Current vs.
Source to Drain Voltage
20
16
V
GS
= 0 V
12
5, 10 V
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
2SK3235
Gate to Source Cutoff Voltage
vs. Case Temperature
5
V
DS
= 10 V
4
I
D
= 10mA
3
1mA
0.1mA
2
1
0
-50 0
50 100 150 200
Case Temperature Tc (
°
C)
Switching Time Test Circuit
Vin Monitor
10
Ω
Vin
10 V
D.U.T.
Vout
Monitor
R
L
V
DD
= 250 V
Waveform
Vin
10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t
f
7
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