2SC2979 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SC2979

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC2979

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; RBE=<,L=100mH

V(BR)EBO Base-emitter breakdown voltage

IE=10mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=0.75A; IB=0.15A

VBEsat

Base-emitter saturation voltage

IC=0.75A; IB=0.15A

ICBO

Collector cut-off current

VCB=750V ;IE=0

ICEO

Collector cut-off current

VCE=650V; RBE=<

hFE-1

DC current gain

IC=0.3A ; VCE=5V

hFE-2

DC current gain

IC=1.5A ; VCE=5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

VCCA250V; IC=1.5A

IB1=0.3A;IB2=-0.75A

MIN TYP. MAX UNIT

800

V

7

V

1.0

V

1.5

V

100 µA

100 µA

15

7

1.0 µs

3.0 µs

1.0 µs

2

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