BUW11F View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BUW11F Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW11F BUW11AF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BUW11F
400
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=0.1A ; IB=0; L=25mH
V
BUW11AF
450
VCEsat
Collector-emitter
saturation voltage
BUW11F IC=3A; IB=0.6A
BUW11AF IC=2.5A; IB=0.5A
1.5
V
VBEsat
Base-emitter
saturation voltage
BUW11F IC=3A; IB=0.6A
BUW11AF IC=2.5A; IB=0.5A
1.4
V
ICES
Collector cut-off current
VCE=Rated VCES; VBE=0
Tj=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
固I电NC半H导A体NGE SEMICONDUTOR hFE-1
DC current gain
hFE-2
DC current gain
Switching times resistive load
ton
Turn-on time
VEB=9V; IC=0
IC=5mA ; VCE=5V
IC=0.5A ; VCE=5V
For BUW11F
10
10
35
10
35
1.0
mA
μs
ts
Storage time
IC=3A ;IB1=-IB2=-0.6A
4.0
μs
For BUW11AF
tf
Fall time
IC=2.5A ;IB1=-IB2=-0.5A
0.8
μs
2
Share Link: 