2SB834-Y-TF3-T View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SB834-Y-TF3-T

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SB834

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified )

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Power Dissipation (TC=25°C)

TO-126/TO-220F

TO-220

SYMBOL

VCBO

VCEO

VEBO

IC

IB

PC

RATINGS

-60

-60

-7

-3

-0.5

25

30

UNIT

V

V

V

A

A

W

W

Junction Temperature

TJ

+125

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

DC Current Gain

Current Gain Bandwidth Product

SYMBOL

TEST CONDITIONS

BVCEO IC=-50mA

ICBO VCB=-60V

IEBO VEB=-7V

VCE(SAT) IC=-3A, IB=0.3A

VBE(ON) VCE=-5V, IC=-0.5A

hFE1 IC=-0.5A, VCE=-5V

hFE2 IC=-3A, VCE=-5V

fT

VCE=-5V, IC=-0.5A

„ CLASSIFICATION of hFE1

RANK

RANGE

O

60-120

Y

100-200

MIN TYP MAX UNIT

-60

V

-100 μA

-100 μA

-1

V

-0.7 -1

V

60

300

20

9

MHZ

GR

150-300

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R204-018.D

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