2SB834-O-TA3-T View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SB834-O-TA3-T

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SB834

„ TYPICAL CHARACTERISTICS

Power Derating

40

35

30

25

20

15

TO-126/TO-220F

10

TO-220

5

0

0 25 50 75 100 125 150

Temperature, TC (°C)

DC Current Gain

300

TC=100°C

TC=25°C

TC=-25°C

100

VCE = 5.0V

50

30

PNP SILICON TRANSISTOR

Collector Current vs.

Collector-Emitter Voltage

-3.0 -70 -80

-60

-50

-40

-30

-2.0

-20

IB = -10mA

-1.0

TC=25°C

0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0

Collector-Emitter Voltage, VCE (V)

Collector Current vs.

-3.0

Base-Emitter Voltage

VCE = 5.0V

-2.0 TC=100°C

25°C

-25°C

-1.0

10

-2 -5 -10 -20 -50-100-200 -500 -1k -3k

Collector Current, IC (mA)

Collector-Emitter Saturation Voltage

vs. Collector Current

-1.0

Common Emitter

-0.4 IC/IB = 10

-0.2

-0.1

-0.05

TC=100°C

25°C

-25°C

-0.02

-2

-5 -10 -20 -50-100-200-500-1k -2k -3k

Collector Current, IC (mA)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

0

-0.4

-0.8

-1.2

-1.6

Base-Emitter Voltage, VBE (V)

Active-Region Safe Operating AREA

(SOA)

-10

100ms 10ms

-5.0

1ms

-2.0

DC

-1.0

-0.5

-0.2

-0.1

-1.0

Bonding Wire Limit

Second Breakdown Limit

Thermally Limited

at TC=25°C(Single Pulse)

-2.0 -5.0-7.0-10 -20 -50-70-100

Collector Emitter Voltage, VCE (V)

3 of 4

QW-R204-018.D

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