BD136-10 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BD136-10 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
PNP power transistors
Product specification
BD136; BD138; BD140
FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).
APPLICATIONS
• General purpose power applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139.
handbook, halfpage
2
3
1
1 2 3 Top view
MAM272
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BD136
BD138
BD140
collector-emitter voltage
BD136
BD138
BD140
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb ≤ 70 °C
MIN.
MAX.
UNIT
−
−45
V
−
−60
V
−
−100
V
−
−45
V
−
−60
V
−
−80
V
−
−5
V
−
−1.5
A
−
−2
A
−
−1
A
−
8
W
−65
+150
°C
−
150
°C
−65
+150
°C
1999 Apr 12
2
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