D882SS View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
D882SS Datasheet PDF : 4 Pages
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2SD882SS
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
Pulse
ICP
3
A
7
A
Base Current
IB
0.6
A
Collector Dissipation
Ta=25℃
TC=25℃
PC
1
W
10
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=100µA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVEBO IE=100µA, IC=0
ICBO VCB=30V, IE=0
Emitter Cut-off Current
IEBO VEB=3V, IC=0
DC Current Gain (Note 1)
hFE1
hFE2
VCE=2V, IC=20mA
VCE=2V, IC=1A
Collector-Emitter Saturation Voltage
VCE(SAT) IC=2A, IB=0.2A
Base-Emitter Saturation Voltage
VBE(SAT) IC=2A, IB=0.2A
Current Gain Bandwidth Product
fT
VCE=5V, IC=0.1A
Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
MIN TYP MAX UNIT
40
V
30
V
5
V
1000 nA
1000 nA
30 200
100 150 400
0.3 0.5
V
1.0 2.0
V
80
MHz
45
pF
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-018,B
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