KF7N60F View Datasheet(PDF) - KEC

Part Name

Description

Manufacturer

KF7N60F

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC 

KF7N60P/F

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC

Static

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Drain Cut-off Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source ON Resistance

Dynamic

SYMBOL

TEST CONDITION

BVDSS

ID=250μA, VGS=0V

ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃

IDSS

VDS=600V, VGS=0V

Vth

VDS=VGS, ID=250μA

IGSS

VGS=±30V, VDS=0V

RDS(ON)

VGS=10V, ID=3.5A

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay time

Turn-on Rise time

Turn-off Delay time

Turn-off Fall time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode Ratings

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

VDS=480V, ID=7A

VGS=10V

(Note4,5)

VDD=300V

ID=7A

RG=25Ω

(Note4,5)

VDS=25V, VGS=0V, f=1.0MHz

Continuous Source Current

Pulsed Source Current

IS

VGS<Vth

ISP

Diode Forward Voltage

VSD

IS=7.0A, VGS=0V

Reverse Recovery Time

Reverse Recovery Charge

trr

IS=7.0A, VGS=0V,

Qrr

dIs/dt=100A/μs

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =8mH, IS=7A, VDD=50V, RG=25Ω, Starting Tj=25℃.

Note 3) IS≤7.0A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.

Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

Marking

MIN. TYP. MAX. UNIT

600

-

-

V

-

0.65

-

V/℃

-

-

10

μA

2.5

-

4.5

V

-

- ±100 nA

-

0.95 1.2

Ω

-

19

-

-

4.4

-

nC

-

7

-

-

22

-

-

25

-

ns

-

57

-

-

24

-

-

900

-

-

100

-

pF

-

7.5

-

-

-

7

A

-

-

28

-

-

1.4

V

-

320

-

ns

-

3.1

-

μC

1

1

KF7N60

KF7N60

P

001

2

F

001

2

1 PRODUCT NAME

2 LOT NO

2013. 5. 03

Revision No : 1

2/7

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