MRF9030NBR1 View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
Manufacturer
MRF9030NBR1 Datasheet PDF : 16 Pages
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TYPICAL CHARACTERISTICS
22
60
20
Gps
40
18
η
16
14
20
VDD = 26 Vdc
IDQ = 250 mA
0
f1 = 945 MHz
f2 = 945.1 MHz
−20
12
IMD
−40
10
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain, Efficiency and IMD
versus Output Power
−60
100
1010
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 10. MTTF Factor versus Junction Temperature
MRF9030NR1 MRF9030NBR1
6
RF Device Data
Freescale Semiconductor
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