BD650 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

BD650

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

BD646/648/650/652

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

BD646

V(BR)CEO

Collector-emitter

breakdown voltage

BD648

BD650

BD652

VCEsat-1

VCEsat-2

VBEsat

VBE

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter on voltage

BD646

BD648

ICBO

Collector cut-off current

BD650

BD652

BD646

BD648

ICEO

Collector cut-off current

BD650

BD652

IEBO

Emitter cut-off current

hFE

DC current gain

CONDITIONS

IC=-30mA, IB=0

IC=-3A ,IB=-12mA

IC=-5A ,IB=-50mA

IC=-5A ,IB=-50mA

IC=-3A ; VCE=-3V

VCB=-60V, IE=0

VCB=-40V, IE=0 ;TC=150

VCB=-80V, IE=0

VCB=-50V, IE=0 ;TC=150

VCB=-100V, IE=0

VCB=-60V, IE=0 ;TC=150

VCB=-120V, IE=0

VCB=-70V, IE=0 ;TC=150

VCE=-30V, IB=0

VCE=-40V, IB=0

VCE=-50V, IB=0

VCE=-60V, IB=0

VEB=-5V; IC=0

IC=-3A ; VCE=-3V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

MIN

-60

-80

-100

-120

TYP.

MAX UNIT

V

-2.0

V

-2.5

V

-3.0

V

-2.5

V

-0.2

-2.0

-0.2

-2.0

mA

-0.2

-2.0

-0.2

-2.0

-0.5

mA

-5

mA

750

MAX

2.0

UNIT

/W

2

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