SavantIC Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1559
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA
VBEsat
Base-emitter saturation voltage
IC=-6A ;IB=-6mA
ICBO
Collector cut-off current
VCB=-160V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-6A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A;RL=10C
IB1=- IB2=-6mA
VCC=60V
MIN TYP. MAX UNIT
-150
V
-2.5
V
-3.0
V
-100 µA
-100 µA
5000
160
pF
65
MHz
0.7
µs
3.6
µs
0.9
µs
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
2