SVF2N60M View Datasheet(PDF) - Silan Microelectronics
Part Name
Description
Manufacturer
SVF2N60M Datasheet PDF : 10 Pages
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SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-cellTM structure DMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No.
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60DTR
Package Type
TO-251-3L
TO-220F-3L
TO-220-3L
TO-252-2L
TO-252-2L
Marking
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60D
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
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