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Part Name
Description
2SA1940 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SA1940
TOSHIBA Transistor Silicon PNP Triple Diffused Type
Toshiba
2SA1940 Datasheet PDF : 4 Pages
1
2
3
4
−
10
−
8
−
6
−
4
−
2
0
0
I
C
– V
CE
−
300
−
250
−
200
−
150
Common emitter
Tc = 25°C
−
100
−
50
−
40
−
30
−
20
IB =
−
10 mA
−
2
−
4
−
6
−
8
−
10
Collector-emitter voltage V
CE
(V)
2SA1940
I
C
– V
BE
−
10
−
8
−
6
Tc = 100°C
25°C
−
4
−
25°C
−
2
Common emitter
VCE =
−
5 V
0
0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
Base-emitter voltage V
BE
(V)
V
CE (sat)
– I
C
−
10
−
1
−
0.1
Tc = 25°C
Tc = 100°C
Tc =
−
25°C
−
0.01
−
0.01
−
0.1
Common emitter
IC/IB = 10
−
1
−
10
−
100
Collector current I
C
(A)
Safe Operating Area
−
50
−
30
IC max (pulsed)*
−
10
IC max (continuous)
−
5
−
3
DC operation
Tc = 25°C
−
1
1 ms*
10 ms*
100 ms*
−
0.5
*: Single nonrepetitive pulse
−
0.3
Tc = 25°C
Curves must be derated
−
0.1 linearly with increase in
temperature.
−
0.05
−
2
−
3
−
10
−
30
VCEO max
−
100
−
300
−
1000
Collector-emitter voltage V
CE
(V)
h
FE
– I
C
1000
Tc = 100°C
Tc = 25°C
100
Tc =
−
25°C
10
1
−
0.01
Common emitter
VCE =
−
5 V
−
0.1
−
1
−
10
Collector current I
C
(A)
3
2006-11-09
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