TSM9N90CZ View Datasheet(PDF) - TSC Corporation
Part Name
Description
Manufacturer
TSM9N90CZ Datasheet PDF : 10 Pages
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TSM9N90
900V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
TO-220
ITO-220
Unit
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJC
RӨJA
0.43
2.6
62.5
oC/W
Electrical Specifications (Tc = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250uA
VGS = 10V, ID = 4.5A
VDS = VGS, ID = 250uA
BVDSS
900
--
--
V
RDS(ON)
--
1.13 1.4
Ω
VGS(TH)
2.0
--
4.0
V
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
VDS = 900V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 30V, ID = 4.5A
IS = 9A, VGS = 0V
IDSS
--
--
10
uA
IGSS
--
-- ±100 nA
gfs
--
10
--
S
VSD
--
--
1.5
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching c
VDS = 720V, ID = 9A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
Qg
--
65
--
Qgs
--
11
--
nC
Qgd
--
23
--
Ciss
-- 2324 --
Coss
--
184
--
pF
Crss
--
29
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 10V, ID = 9A,
VDD = 450V, RG = 25Ω
td(on)
tr
td(off)
tf
--
61
--
--
49
--
nS
--
318
--
--
100
--
Reverse Recovery Time
VGS = 0V, IS = 9A,
tfr
--
470
--
nS
Reverse Recovery Charge
Notes:
dIF/dt = 100A/us
Qfr
--
4.9
--
uC
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Max Rating EAS Test Condition: VDD = 50V, IAS=9A, L=20mH, RG=25Ω, Starting TJ=25℃
3. Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=9A, L=1mH, RG=25Ω, Starting TJ=25℃
4. ISD ≤9A, di/dt ≤ 200A/uS, VDD ≤ BV, Starting TJ=25℃
5. Pulse test: pulse width ≤300uS, duty cycle ≤2%
6. b For design reference only, not subject to production testing.
7. c Switching time is essentially independent of operating temperature.
2/10
Version: B13
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