2SK3018LT1 View Datasheet(PDF) - Willas Electronic Corp.
Part Name
Description
Manufacturer
2SK3018LT1 Datasheet PDF : 3 Pages
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WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SK3018LTT1HRU
FM1200-M+
Pb Free Product
N-chFaenanteul MreOsSFET
Package outline
• Batch process design, excellent power dissipation offers
FEA• TLbUoewtRtepErrroSefvileerssuerlfeaackeamgoeucnutrerdenatpapnlidc
thermal resistan
ation in order to
ce.
z Looptwimoizne-breoasridstsapnaccee.
z
•
•
FHLoaigwshtpcsouwwrreietrnclthocsinasp,gahsibgpihlieteye,ffdliocwiefnocryw. ard
voltage
dr
op.
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z • LHoigwh svuorlgteagcaepdabriivlitey.makes this device ideal for portable equipment
z • EGauasridlyrindgefsoirgonveedrvodlrtiavgee cpirrocteucittsion.
• Ultra high-speed switching.
z • ESialiscoyntoeppitaaxraialllepllanar chip, metal silicon junction.
z • PLeba-dF-rfreeee ppaarctskmageeet iesnvairvoanimlaebnlteal standards of
MIL-STD-19500 /228
• RRooHHSSprpodroucdtufocrtpfaocrkipnagcckoidnegsucfofixd"eG"suffix ”G”
1. GATE
2. SOURCE
3. DRAIN
0.071(1.8)
0.056(1.4)
HHaalologgenenfrefereperodpurcotdfourcptafcokrinpg acocdkeinsguffcixo"dHe" suffix “H”
MMeacrkhinagn:iKcNal data
MO•SEFpEoTxyM: UALX94IM-VU0 rMateRdAflTamINeGreSta(rdTaan=t 25°C unless otherwise noted)
• Case : Molded plastic, SOD-123H
Symbol Parameter
V, alue
• Terminals :Plated terminals, solderable per MIL-STD-750
U0n.0i3t1s(0.8) Typ.
Equivalen0.0t40c(1i.0r)cuit
0.024(0.6)
0.031(0.8) Typ.
VDS
DrainM-Seothuorcde2V02o6ltage
30
V
VGSS• PolariGtya:tIen-dSiocautrecde bVyocltaatgheode band
ID • MountCinognPtinousiotiuosn D: Araniyn Current
PD • WeighPt o: AwpeprrDoxisimsipaatetidon0.011 gram
±20
0.1
0.35
V
Dimensions in inches and (millimeters)
A
W
TJ
JMunAcXtioIMn UTeMmRpeAraTtIuNreGS AND ELECTRICAL CH1A5R0ACTERIS℃TICS
RaTtinstggs at 25℃SatomrabigeentTteemmppeeraratuturereunless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
ForRcθaJpAacitive loTahde,rdmearaltRe ecusrisretantnbcye,20J%unction-to-Ambient
-55~+150
357
℃
℃ /W
MarMkinOg SCoFdEe T
ELECRATTRINICGSAL
CHARACTERSYIMSBTOILCFSM(11T220a-M=H2F5M℃11330u-MnHlFeMs11s440-oMtHhFeM1r1w550-iMsHeFMn11o660t-eMdH )FM11880-MH
FM1100-MH
10
FM1150-MH
115
FM1200-MH
120
UNIT
MaxPimaurmamReecteurrrent Peak Reverse Voltage
MaxOimfuf mChRaMrSacVtoeltraigsetics
MaxDimraumin-DSCoBulroccekinBgreVaokltadgoewn Voltage
Maximum Average Forward Rectified Current
Zero Gate Voltage Drain Current
SymboVlRRM Test2C0onditi3o0n
40
VRMS
14
21
28
VDS VDC VGS 2=00V, ID 3=010µA 40
IO
IDSS
VDS =30V,VGS = 0V
50 M6in0 Ty8p0 Ma1x00 Unit1s50
35
42
56
70
105
50
3600
80
100
V150
1.0
0.2
µA
200 Volts
140 Volts
200 Volts
Amps
PeaGk Faotrewa–rSd oSuurrgceeCluerareknat 8g.e3 mcus rsrinegnlet half sine-wavIGeSS IFSM VGS =±20V, VDS = 0V
superimposed on rated load (JEDEC method)
30
±500 nA
Amps
TypGicaaltTehTerhmraelsRheoslidstaVnocleta(gNeote 2)
VGS(thR) ΘJA VDS = 3V, ID =100µA
0.8 40
1.5
V
℃/W
Typical Junction Capacitance (Note 1)
CJ VGS = 4V, ID = 10mA
120
8
Ω
PF
OpeDrartaining -TSeomuprecreatuOren-RRaengseistance
RDS(on) TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG VGS =2.5V,ID =1mA
- 65 to +175
13
Ω
℃
Forward Transconductance
gFS
VDS =3V, ID = 10mA
20
mS
Dynamic ChaCrHaAcRteArCisTtEicRsIS*TICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
MaxIinmpuumt ACvaepraagceitRaenvceerse Current at @T A=25℃ Ciss IR
0.5 13
pF
RateOduDtpCuBtloCcakipnagcVitoaltnacgee
@T A=125℃Coss
VDS =5V,VGS =0V,f =1MHz
10 9
pF
mAmps
NOTRESe:verse Transfer Capacitance
Crss
1- MSeawsuirtecdhaitn1gMCHhZaarnadcatpeprlieisdtriecvse*rse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Turn-On Delay Time
td(on)
4
pF
15
ns
Rise Time
tr
VGS =5V, VDD =5V,
35
ns
Turn-Off Delay Time
td(off)
ID =10mA, Rg=10Ω, RL=500Ω,
80
ns
Fall Time
tf
* These parameters have no way to verify.
2012-06
80
ns
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
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