2N3879 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
Manufacturer
2N3879 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3879
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
VBEsat
Base-emitter saturation voltage
ICEV
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
IC=4A; IB=0.4A
VCE=120V;VBE(off)=1.5V
VCE=100V;VBE(off)=1.5V TC=150
VCE=40V; IB=0
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=2V
hFE-2
hFE-3
COB
DC current gain
DC current gain
Collector output capacitance
IC=4A ; VCE=5V
IC=0.5A ; VCE=5V
IE=0 ; VCB=10V; f=1MHz
MIN TYP. MAX UNIT
75
V
1.2
V
2.0
V
0.5
4.0
mA
5.0 mA
1.0 mA
12
100
20
80
40
175 pF
2
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