BYV10-20A View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BYV10-20A Datasheet PDF : 4 Pages
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BYV 10-20 A
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
IR *
Tj = 25°C
Tj = 100°C
VF *
IF = 1A
IF = 3A
* Pulse test: tp ≤ 300µs δ < 2%.
Test Conditions
VR = VRRM
Tj = 25°C
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
C
Tj = 25°C
VR = 0
Min. Typ. Max. Unit
0.3
mA
10
0.45
V
0.75
Min.
Typ.
330
Max. Unit
pF
Forward current flow in a Schottky rectifier is due to
majority carrier conduction. So reverse recovery is
not affected by stored charge as in conventional PN
junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
Figure 1. Forward current versus forward
voltage at low level (typical values).
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in pa-
rallel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
Figure 2. Forward current versus forward
voltage at high level (typical values).
2/4
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