L2N7002DMT3G View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
L2N7002DMT3G Datasheet PDF : 2 Pages
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Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SC–74
• We declare that the material of product
compliance with RoHS requirements.
• ESD Protected:1000V
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VDSS
VDGR
ID
ID
IDM
Value
60
60
±115
±75
±800
Unit
Vdc
Vdc
mAdc
VGS
VGSM
±20
Vdc
±40
Vpk
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
RθJA
PD
RθJA
TJ, Tstg
556
300
2.4
417
-55 to
+150
°C/W
mW
mW/°C
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002DMT1G 72D
L2N7002DMT3G 72D
3000 Tape & Reel
10000 Tape & Reel
Product specification
L2N7002DMT1G
SC-74
115 mAMPS
60 VOLTS
R DS(on) = 7.5 W
N - Channel
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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