TIP3055 View Datasheet(PDF) - Bourns, Inc
Part Name
Description
Manufacturer
TIP3055 Datasheet PDF : 4 Pages
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TIP3055
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS637AD
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
0·01
0·1
1·0
10
IC - Collector Current - A
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS637AB
tp = 300 µs,
d = 0.1 = 10%
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
10
d = 0.1 = 10%
DC Operation
1·0
0·1
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 2.
1000
PRODUCT INFORMATION
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
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