TSM210N06 View Datasheet(PDF) - TSC Corporation

Part Name

Description

Manufacturer

TSM210N06

60V N-Channel Power MOSFET

TSC Corporation 

TO-220

Pin Definition:

1. Gate

2. Drain

3. Source

TSM210N06

60V N-Channel Power MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on)(mΩ)

60

3.1 @ VGS =10V

ID (A)

210

Features

● Advanced Trench Technology

● Low RDS(ON) 3.1mΩ (Max.)

● Low gate charge typical @ 160nC (Typ.)

● Low Crss typical @ 300pF (Typ.)

Ordering Information

Part No.

TSM210N06CZ C0

Package

TO-220

Packing

50pcs / Tube

Block Diagram

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

TC=25°C

Continuous Drain Current

TC=70°C

TA=25°C

ID

TA=70°C

Drain Current-Pulsed Note 1

IDM

Avalanche Current, L=0.3mH

IAS, IAR

Avalanche Energy, L=0.3mH

EAS, EAR

TC=25°C

Maximum Power Dissipation

TC=70°C

TA=25°C

PD

TA=70°C

Storage Temperature Range

TSTG

Operating Junction Temperature Range

TJ

* Limited by maximum junction temperature

Limit

60

±20

210

170

19

15.2

650

113

1900

250

160

2

1.3

-55 to +150

-55 to +150

Thermal Performance

Parameter

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

Notes: Surface mounted on FR4 board t ≤ 10sec

Symbol

RӨJC

RӨJA

Limit

0.5

62.5

Unit

V

V

A

A

A

mJ

W

°C

°C

Unit

oC/W

oC/W

1/4

Version: A12

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