2SC3691 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SC3691 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC3691
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=3A; IB=0.3A,L=1mH
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.15 A
VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=0.2A
VBEsat-1 Base-emitter saturation voltage
IC=3A; IB=0.15 A
VBEsat-2 Base-emitter saturation voltage
IC=4A; IB=0.2A
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=60V; IE=0
VCE=60V; VBE=-1.5V
Ta=125℃
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
hFE-2
DC current gain
IC=1A ; VCE=2V
hFE-3
DC current gain
IC=3A ; VCE=2V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A;RL=17Ω
IB1=-IB2=0.15A
VCC≈50V
hFE-2 classifications
M
L
K
100-200 150-300 200-400
MIN TYP. MAX UNIT
60
V
0.3
V
0.5
V
1.2
V
1.5
V
10
μA
10
μA
1.0
mA
10
μA
100
100
200
400
60
70
pF
150
MHz
0.3
μs
1.5
μs
0.3
μs
2
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