CYStech Electronics Corp.
6A NPN Epitaxial Planar Power Transistor
TIP41CE3
Spec. No. : C611E3
Issued Date : 2004.07.14
Revised Date :
Page No. : 1/3
Description
TIP41CE3 is designed for use in general purpose amplifier and switching applications.
Features
• Low collector-emitter saturation voltage, VCE(sat) = 1.5V(max) @ IC = 6A
• High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)
• High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA
Symbol
TIP41CE3
Outline
TO-220AB
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs, Duty≦2%.
TIP41CE3
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
BCE
Limits
100
100
5
6
10 (Note 1)
2
2
65
62.5
1.923
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification