2SK3348 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SK3348

Silicon N Channel MOS FET High Speed Switching

Renesas Electronics 

2SK3348

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA)

RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA)

• 2.5 V gate drive device.

• Small package (CMPAK)

Outline

CMPAK

3

D

G

S

ADE-208-772 A (Z)

2nd.Edition.

June 1999

1

2

1. Source

2. Gate

3. Drain

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