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Part Name
Description
2SK3348 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SK3348
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
2SK3348 Datasheet PDF : 10 Pages
1
2
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4
5
6
7
8
9
10
Typical Capacitance
vs. Drain to Source Voltage
100
VGS = 0
50
f = 1 MHz
Coss
20
Ciss
10
5
Crss
2
1
0
4
8
12 16
20
Drain to Source Voltage VDS (V)
2SK3348
Switching Characteristics
1000
VGS = 4 V, VDS = 10 V
PW = 5 µs, duty < 1%
tf
tr
t
d(off)
100
t
d(on)
10
0.01
0.1
1.0
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
0.5
Pulse Test
0.4
0V
0.3
0.2
V
GS
= 2.5 V
0.1
–2.5 V
0
0.2 0.4 0.6 .0.8 1
Source to Drain Voltage V
SD
(V)
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