N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
102 Top :
VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.06
0.05
VGS = 10 V
0.04
0.03
0.02
VGS = 20 V
0.01
@ Note : TJ = 25 oC
0.00
0
25
50
75
100
125
150
175
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
3000
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
2000
C oss
1000
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
IRFP150A
Fig 2. Transfer Characteristics
102
175 oC
101
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
100
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
102
101
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =40.0 A
0
0
10 20 30
40
50
60
70 80
QG , Total Gate Charge [nC]