2SD1691 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1691 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2.0A ;IB=0.2A
VBEsat Base-emitter saturation voltage
IC=2.0A ;IB=0.2A
ICBO
Collector cut-off current
VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=1V
hFE-2
DC current gain
IC=2A ; VCE=1V
hFE-3
DC current gain
IC=5A ; VCE=1V
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2A; IB1=-IB2=0.2A
RL=5.0Ω;VCC≈10V
hFE-2 Classifications
M
L
K
100-200 160-320 200-400
Product Specification
2SD1691
MIN TYP. MAX UNIT
0.3
V
1.2
V
10
μA
10
μA
60
100
400
50
0.2
1.0
μs
1.1
2.5
μs
0.2
1.0
μs
2
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