2SD1803-R-TM3-R View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SD1803-R-TM3-R

HIGH CURRENT SWITCHING APPLICATION

Unisonic Technologies 

2SD1803

NPN SILICON TRANSISTOR

„ ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

DC

IC

PULSE

ICM

5

A

8

Power Dissipation

Junction Temperature

Storage Temperature

TA=25°C

TC=25°C

PD

TJ

TSTG

1

W

20

+150

°C

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified.)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

C-E Saturation Voltage

B-E Saturation Voltage

Gain-Bandwidth Product

Output Capacitance

Turn-on Time

Storage Time

Fall Time

„ CLASSIFICATION OF hFE1

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE(SAT)

VBE(SAT)

fT

Cob

tON

tS

tF

TEST CONDITIONS

IC=10μA, IE=0

IC=1mA, RBE=∞

IE=10μA, IC=0

VCB=40V, IE=0

VEB=4V, IC=0

VCE=2V, IC=0.5A

VCE=2V, IC=4A

IC=3A, IB=0.15A

IC=3A, IB=0.15A

VCE=5V, Ic=1A

VCB=10V, f=1MHz

See Test Circuit

See Test Circuit

See Test Circuit

MIN TYP MAX UNIT

60

V

50

V

6

V

1 μA

1 μA

70

400

35

220 400 mV

0.95 1.3 V

180

MHz

40

pF

50

ns

500

ns

20

ns

RANK

RANGE

Q

70 ~ 140

R

100 ~ 200

S

140 ~ 280

T

200 ~ 400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R209-014,E

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