2SA1633 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

2SA1633

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A ;IB=-0.5A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

VCB=-150V; IE=0

VEB=-6V; IC=0

IC=-1A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-10V

‹ hFE Classifications

D

E

60-120

100-200

F

160-320

Product Specification

2SA1633

MIN TYP. MAX UNIT

-150

V

-1.5

V

-2.0

V

-0.1 mA

-0.1 mA

60

320

20

MHz

2

Share Link: