2SB1503 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1503

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1503

DESCRIPTION

·High DC Current Gain-

: hFE= 5000(Min)@IC= -7A

·Low-Collector Saturation Voltage-

: VCE(sat)= -2.5V(Max.)@IC= -7A

·Complement to Type 2SD2276

APPLICATIONS

·Designed for power amplifier applications

·Optimum for 110W HiFi output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-7

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-12

A

120

W

3.5

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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