NTE2930 View Datasheet(PDF) - NTE Electronics
Part Name
Description
Manufacturer
NTE2930 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature
Coefficient
∆V(BR)DSS/ ID = 250µA
∆TJ
Gate Threshold Voltage
VGS(th) VDS = 5V, ID = 250µA
Gate–Source Leakage Forward
IGSS VGS = 10V
Gate–Source Leakage Reverse
IGSS VGS = –10V
Drain–to–Source Leakage Current
IDSS VDS = 100V
VDS = 80V, TC = +150°C
Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 15.5A, Note 4
Forward Transconductance
gfs
VDS = 40V, ID = 15.5A, Note 4
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn–On Delay Time
Rise Time
td(on)
tr
VDD = 50V, ID = 40A, RG = 6.2Ω,
Note 4, Note 5
Turn–Off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Gate–Source Charge
Qg
VGS = 10V, ID = 40A, VDS = 80V,
Qgs
Note 4, Note 5
Gate–Drain (“Miller”) Charge
Qgd
Source–Drain Diode Ratings and Characteristics
100 –
–
V
– 0.11 – V/°C
2.0 – 4.0 V
– – 100 nA
– – –100 nA
– – 10 µA
– – 100 µA
– – 0.04 Ω
– 27.3 – mhos
– 1750 2270 pF
– 420 485 pF
– 185 215 pF
– 17 50 ns
– 20 50 ns
– 80 160 ns
– 45 100 ns
– 75 97 nC
– 13.2 – nC
– 34.8 – nC
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
(Body Diode)
– – 31 A
ISM (Body Diode) Note 1
– – 170 A
VSD TJ = +25°C, IS = 31A, VGS = 0V, Note 4 –
– 1.6 V
trr
TJ = +25°C, IF = 40A, diF/dt = 100A/µs, – 135 – ns
Qrr
Note 4
– 0.65 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
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