2N5550 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5550
2N5551
hFE
—
60
—
80
—
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N5550
2N5551
60
250
80
250
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ,
f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N5550
2N5551
Both Types
2N5550
2N5551
Both Types
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
20
30
VCE(sat)
—
—
—
VBE(sat)
—
—
—
fT
100
Cobo
—
Cibo
—
—
hfe
50
NF
—
—
—
—
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
300
MHz
6.0
pF
pF
30
20
200
—
dB
10
8.0
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data