BC857(2008) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BC857
(Rev.:2008)

PNP Silicon AF Transistor

Infineon Technologies 

BC856...-BC860...

DC current gain hFE = ƒ(IC)

VCE = 1 V

10 3

h FE 5 100 C

25 C

102 -50C

5

EHP00382

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 20

10 2

mA

ΙC

10 1

5

EHP00380

100 C

25 C

-50 C

10 1

10 0

5

5

10 0

10 -2

5 10 -1 5 10 0

5 101 mA 10 2

ΙC

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 20

10 -1

0

0.1 0.2 0.3 0.4 V 0.5

VCEsat

Collector cutoff current ICBO = ƒ(TA)

VCBO = 30 V

10 2

mA

ΙC

10 1

5

10 0

5

10 -1

0

100 C

25 C

-50 C

0.2 0.4 0.6 0.8

EHP00379

10 4

nA

Ι CB0

10 3

5

10 2

5

10 1

5

V 1.2

V BEsat

10 0

5

10 -1

0

EHP00381

max

typ

50

100 C 150

TA

6

2008-04-29

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