Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N6058/2N6059
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(sus)
Collector-emitter
sustaining voltage
2N6058
2N6059
VCEsat-1 Collector-emitter saturation voltage
VCEsat-2 Collector-emitter saturation voltage
VBEsat Collector-emitter saturation voltage
VBE
Base-emitter on voltage
2N6058
ICEO
Collector cut-off current
2N6059
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Trainsistion frequency
CONDITIONS
IC=0.1A ;IB=0
IC=6A IB=24mA
IC=12A IB=120mA
IC=12A IB=120mA
IC=6A ; VCE=3V
VCE=40V; IB=0
VCE=50V; IB=0
VEB=5V; IC=0
IC=6A ; VCE=3V
IC=12A ; VCE=3V
IC=5A ;VCE=3V;f=1MHz
MIN TYP. MAX UNIT
80
V
100
V
2
V
3
V
4
V
2.8
V
1
mA
2
mA
750
100
4
MHz
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