IRF530 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
IRF530 Datasheet PDF : 3 Pages
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IRF530
Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1)
Drain to Gate Voltage (RGs = 20kl3) (Note 1)
Continuous Drain Current
TC = 100°C
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Maximum Power Dissipation
Dissipation Derating Factor
Single Pulse Avalanche Energy Rating (Note 4)
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
VDS
VDGR
ID
ID
IDM
VG§
PD
EAS
Tj TSTG
T|_
Tp^g
IRF530
100
100
14
10
56
±20
79
0.53
69
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/°C
mJ
°C
°C
°C
CAUTION: Stresses above those listed In "Absolute Maximum Ratings" may cause permanent damage to the device. This Is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto150°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
WIN
Drain to Source Breakdown Voltage
BVDSS ID = 250uA VGS=ov (Figure 10)
100
Gate to Threshold Voltage
VGS(TH) VGS = VDS. ID = 250uA
2
Zero Gate Voltage Drain Current
bss VDS = 95V, VGS= ov
-
VDS = 0-8 x Rated BVrjss. VGs = OV, Tj = 150°C
-
On-State Drain Current (Note 2)
'D(ON) VDS * b(ON) x rDS(ON) MAX.VGs = 10V
14
Gate to Source Leakage Current
!GSS VGS = ±2ov
-
Drain to Source On Resistance (Note 2) rDS(ON) ID = 8.3A, VGS = 10V (Figures 8, 9)
-
Forward Transconductance (Note 2)
9fs
VDS ^ 50V. !D =8-3A (Figure 12)
5.1
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
'd(ON) VDD = 50V,ID = 14A, RG =1213, RL = 3.413
-
MOSFET Switching Times are Essentially
tr
Independent of Operating 1emperature
-
ld(OFF)
-
Fall Time
tf
-
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain "Miller" Charge
Q9(TOT) VGS = 10V, ID = 14A, VDS= 0.8 x Rated BVDSS
-
Ig(REF) = 1.5mA (Figure 14)
Qgs
Gate Charge is Essentially ndependent of
Operating Temperature
-
Qgd
-
Input Capacitance
CISS VDS = 25V. VGS = OV, f = 1 MHz (Figure 1 1 )
-
Output Capacitance
CQSS
-
Reverse Transfer Capacitance
CRSS
-
Internal Drain Inductance
LD
Measured from the
Modified MOSFET
Contact Screw on Tab To Symbol Showing the
Center of Die
Internal Devices
Measured from the Drain Inductances
Lead, 6mm (0.25in) from
Package to Center of Die
Internal Source Inductance
LS
Measured from the Source
Lead, 6mm (0.25in) From
Header to Source Bonding
Pad
TYP
-
-
-
-
-
-
0.14
7.6
12
35
25
25
18
4
7
600
250
50
3.5
4.5
7.5
MAX
-
4,0
25
250
-
±500
0.16
-
15
65
70
59
30
-
-
-
-
-
UNITS
V
V
MA
MA
A
nA
£3
S
ns
ns
ns
ns
nC
nC
nC
PF
PF
PF
nH
nH
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R8JC
R6JA
Free Air Operation
-
-
1.9
°C/W
-
-
62.5 °C/W
~
"
"
-
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