2N6668 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

2N6668

Darlington Silicon Power Transistors

ON Semiconductor 

2N6667, 2N6668

20

10

5

3

2

1

0.5

0.3

0.2

0.1

0.05

0.03

0.02

1

5 ms

dc

100 μs

1 ms

TJ = 150°C

2N6667

BONDING WIRE LIMIT 2N6668

THERMAL LIMIT @ TC = 25°C

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED VCEO

2 3 5 7 10

20 30 50 70 100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Maximum Safe Operating Area

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 5.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

10,000

5000

2000

1000

500

TC = 25°C

200

VCE = 4 VOLTS

100

IC = 3 AMPS

50

20

10

1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000

f, FREQUENCY (kHz)

Figure 7. Typical Small−Signal Current Gain

300

TJ = 25°C

200

Cib

Cob

100

70

50

30

0.1 0.2

0.5 1 2

5 10 20

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Typical Capacitance

50 100

20,000

10,000

7000

5000

TJ = 150°C

VCE = 3 V

3000

2000

1000

700

500

300

200

0.1

TJ = 25°C

TJ = - 55°C

0.2 0.3 0.5 0.7 1

23 5

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical DC Current Gain

7 10

2.6

2.2

IC = 2 A

4A

1.8

TJ = 25°C

6A

1.4

1

0.6

0.3

0.5 0.7 1

23

5 7 10 20 30

IB, BASE CURRENT (mA)

Figure 10. Typical Collector Saturation Region

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